Ultra-low Power Voltage Reference in 40 nm (VVR060LT040) |
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40 nm |
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Voltage Reference for Integrated PMU (Silicon-proven 40 nm, low-power for IoT with quiescent current of <0.9 μA)
This series of fully-integrated low power voltage references generates a 0.6 V output voltage and supports an input from 2.8 to 4.2 V. They operate at an ultra-low quiescent current of < 0.9 μA. These voltage references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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Introduction |
Ultra-High Accuracy Bandgap Reference in 130 nm (VBRS1000NT130) |
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130 nm |
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ACCUREF™ Bandgap Reference (Silicon-proven 40 nm, low-power, low-noise, ultra-precise single-digit mV accuracy, no external components required)
ACCUREF™ Voltage and Current References: This series of low-power, low-noise IP cores generates a precise, adjustable reference voltage with single-digit millivolt (mV) accuracy over a wide temperature range without external components. With their unique design that improves upon current products by allowing the systems to operate with ultra-low levels of power consumption without sacrificing accuracy or noise performance, our family of ACCUREF™ voltage and current reference IP cores support a broad range of industry applications with improved efficiency and remarkable area savings overall.
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Introduction |
3 mA Capless LDO in 40 nm (VLDS0003LNT040) |
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40 nm |
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Power Quencher® Capless LDO (Silicon-proven 40 nm, 3 mA, excellent quiescent current for IoT)
This series of low-power, fully-integrated low dropout (LDO) voltage regulators achieves a low-noise output voltage without external components, thus saving package pins and valuable PC board space. These LDOs are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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Introduction |
High-Accuracy Bandgap Reference in 40 nm (VBR120T040) |
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40 nm |
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Bandgap Reference for Integrated PMU (Silicon-proven 40 nm, high-accuracy of < ±1%)
This series of fully-integrated high-accuracy bandgap voltage references generates a 1.2 V output voltage and supports an input from 2.8 to 4.2 V. They provide an output voltage accuracy of < ±1%. These bandgap references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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Introduction |
Flexsupply™ Switching Converter in 40 nm (VRDS00XXT040) |
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40 nm |
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Flexsupply™ Switching Converter (Silicon-proven 40 nm, allows products to work at ultra-low battery levels, no external components needed)
Flexsupply™ Buck/Boost DC-DC Converters: This series of buck/boost switched capacitor regulated voltage doubler IP cores allows operation across a wide range of battery voltage levels, without external components. With their low power consumption and integrated, modular design, this series of IP cores supports a broad range of industry applications with improved efficiency and flexibility.
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Introduction |
140 mA Buck DC-DC Converter in 40 nm (VBKS0140T040) |
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40 nm |
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Buck DC-DC Converter for Integrated PMU (Silicon-proven 40 nm, 140 mA, optimized clocking to eliminate spurious emissions for low system noise)
This series of buck DC-DC converters delivers up to 140 mA of load current and features optimized clocking options to eliminate spurious emissions resulting in much lower system noise. This buck DC-DC converter is silicon-proven in a 40 nm process and is a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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Introduction |
300 mA Capless LDO in 130 nm (VLDS0300LS130) |
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130 nm |
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Power Quencher® Capless LDO (Silicon-proven 130 nm, 300 mA, excellent quiescent current and load transient regulation)
The Power Quencher® series of fully-integrated low dropout (LDO) voltage regulators operates with ultra-low levels of power consumption without sacrificing other areas of performance. They achieve a low-noise output voltage and do not require the external output capacitor that is typically needed in an LDO for loop stability and noise reduction. This saves component count, board space and cost, and improves overall system reliability.
The Power Quencher® LDO voltage regulator IP cores are optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and Internet of Things (IoT) applications.
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Introduction |
300 mA Capless LDO in 180 nm (VLDS0300RNM180) |
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180 nm |
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Noise Quencher® Capless LDO (Silicon-proven 180 nm, 300 mA, excellent supply noise rejection and fast settling)
Noise Quencher® LDOs: This series of low-power, fully-integrated low dropout (LDO) voltage regulators uses our patented Noise Quencher® Technology to provide best-in-class dynamic performance and noise rejection. The IP cores are unconditionally stable across a wide range of load currents and load capacitances and also do not require external components, thus saving package pins and valuable PC board space. These LDOs are optimized for stand-alone power management integrated circuit (PMIC) ASSPs and other analog and digital applications.
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Introduction |
ASK/OOK Transmitter (R433) |
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The IP is a high performance, easy to use, ASK Transmitter IP for remote wireless applications in the 300 to 450MHz frequency band. This transmitter IP is a true “data-in, antenna-out” monolithic device. R433 has three strong attributes: power delivery, operating voltage and operating temperature. In terms of power, the R433 is capable of delivering +10 dBm into a 50Ω load. This power level enables a small form factor transmitter (lossy antenna) such as a key fob transmitter to operate near the maximum limit of transmission regulations. In terms of operating voltage, the R433 operates from 1.8V to 3.6V.
Application
Garage Door Openers
Remote Controls
Home Automation
Sensor Networks
Security System
Fan Controllers
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Introduction |
10-bit 165 MSPS ADC IP in 28 nm |
80000 Points |
70.000 K μm^2 |
165 MHz |
28 nm |
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UIP_ADC10_165M_809744 is an ultra-compact and very low power analog-to-digital converter (ADC) silicon IP. The 10-bit 165 MSPS ADC includes an internal custom bandgap voltage reference. It is capable of supplying bias currents to other parallel ADCs.
The ADC uses fully differential pipeline architecture with custom low-disturbance digital correction technique which allows single supply bus for both digital and analog. The ADC is designed for high dynamic performance for input frequencies up to Nyquist. This makes the IP perfectly suitable for video, imaging and communication appliances.
The IP is available in different metal options as well as deep N-well (DNW) option for SoC with high level of substrate noise. It consumes only 12mW at 165 MSPS operation and requires silicon area of 0.07 mm2. The IP does not require any external decoupling and is ideal for integration in mixed-signal systems. The output data of ADC is available in 2’s complement format.
UIP_ADC10_165M_809744 can be used in the following applications:
‧Digital imaging
‧TV/Video
‧Wireless LAN
‧Rx communication channel
‧IOT
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Introduction |