Needhelp
?
| PLL 2000M UMC 28 nm logic and Mixed-Mode HPC process | By Quotes | 230.000 μm^2 | 2 GHz | 28 nm |  |
|
| A Phase-Locked Loop (PLL) circuit used to generate the high-speed clock with an operating frequency up to 2000 MHz. This PLL is designed by using the UMC 28 nm logic and Mixed-Mode HPC process. It can be integrated into a chip to generate an accurate clock. | Introduction | |||||
| PLL 3000M UMC 28 nm logic and Mixed-Mode HPC process | By Quotes | 92.400 K μm^2 | 27 MHz | 28 nm | |
|
| It generates a stable high-speed clock from an external slower reference clock signal. It integrates a Voltage-Controlled Oscillator (VCO), a Phase-Frequency Detector (PFD), a Low-Pass Filter (LPF), a 9-bit programmable loop divider, a 2-bit programmable pre-divider and associated support circuitry. This PLL is designed by using the UMC 28 nm logic and Mixed-Mode HPC process, and it supports an operating voltage ranging from 0.81 V to 0.99 V with an operating junction temperature ranging between -40 °C and 125 °C. It accepts FREF frequency ranging from 6 MHz to 27 MHz and generates the output frequency up to 3000 MHz. | Introduction | |||||
| Low power oscillator | 12000 Points | 100.100 μm^2 | 32 KHz | 40 nm | |
|
| OSC32K is designed for 40nm advance process with 1.2v to 3.3v wide power(VDD) range. | Introduction | |||||
| USB2.0 OTG PHY in 40 nm | 80000 Points | 257.556 K μm^2 | 30.6 MHz | 40 nm | |
|
| The IP is an UTMI+ Level 3 compatible USB2.0 OTG function transceiver IP. It is comprised of both USB1.1 and USB2.0 transceivers; itis comprised of digital logic needed to convert USB serial data to 8 or 16 bit parallel data for high speed and full speed. It is also support full speed and low speed serial mode. | Introduction | |||||
| USB2.0 UTMI Device PHY(non-oscillator) | 100000 Points | 280.000 K μm^2 | 30.6 MHz | 40 nm | |
|
| The USB PHY is an UTMI compatible USB2.0 device PHY IP which does not require external oscillator reference. It is comprised of both USB1.1 and USB2.0 transceivers and it is also comprised of digital logic needed to convert USB serial data to 8 or 16 bit parallel data. | Introduction | |||||
| 140 mA Buck DC-DC Converter in 40 nm (VBKS0140T040) | By Quotes | None | None | 40 nm | |
|
| Buck DC-DC Converter for Integrated PMU (Silicon-proven 40 nm, 140 mA, optimized clocking to eliminate spurious emissions for low system noise) This series of buck DC-DC converters delivers up to 140 mA of load current and features optimized clocking options to eliminate spurious emissions resulting in much lower system noise. This buck DC-DC converter is silicon-proven in a 40 nm process and is a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications. | Introduction | |||||
| Flexsupply™ Switching Converter in 40 nm (VRDS00XXT040) | By Quotes | None | None | 40 nm | |
|
| Flexsupply™ Switching Converter (Silicon-proven 40 nm, allows products to work at ultra-low battery levels, no external components needed) Flexsupply™ Buck/Boost DC-DC Converters: This series of buck/boost switched capacitor regulated voltage doubler IP cores allows operation across a wide range of battery voltage levels, without external components. With their low power consumption and integrated, modular design, this series of IP cores supports a broad range of industry applications with improved efficiency and flexibility. | Introduction | |||||
| High-Accuracy Bandgap Reference in 40 nm (VBR120T040) | By Quotes | None | None | 40 nm | |
|
| Bandgap Reference for Integrated PMU (Silicon-proven 40 nm, high-accuracy of < ±1%) This series of fully-integrated high-accuracy bandgap voltage references generates a 1.2 V output voltage and supports an input from 2.8 to 4.2 V. They provide an output voltage accuracy of < ±1%. These bandgap references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications. | Introduction | |||||
| 3 mA Capless LDO in 40 nm (VLDS0003LNT040) | By Quotes | None | None | 40 nm | |
|
| Power Quencher® Capless LDO (Silicon-proven 40 nm, 3 mA, excellent quiescent current for IoT) This series of low-power, fully-integrated low dropout (LDO) voltage regulators achieves a low-noise output voltage without external components, thus saving package pins and valuable PC board space. These LDOs are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications. | Introduction | |||||
| Ultra-low Power Voltage Reference in 40 nm (VVR060LT040) | By Quotes | None | None | 40 nm | |
|
| Voltage Reference for Integrated PMU (Silicon-proven 40 nm, low-power for IoT with quiescent current of <0.9 μA) This series of fully-integrated low power voltage references generates a 0.6 V output voltage and supports an input from 2.8 to 4.2 V. They operate at an ultra-low quiescent current of < 0.9 μA. These voltage references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications. | Introduction | |||||
| μIP | Price | Logic Gate Count | Clock Rate | Technology | Ratings | |
|---|---|---|---|---|---|---|