12-Bit 320MSPS IQ DAC in IBM SOI 180nm |
By Quotes |
254.000 K μm^2 |
320 MHz |
180 nm |
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MIC_DAC12X2 is compact and low power 12-bit digital-to-analog converter
silicon IP in IBM 180nm SOI process. It features two channel current steering DAC.
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Introduction |
14-Bit 1MSPS DAC in GSMC110nm |
By Quotes |
75.000 K μm^2 |
1 MHz |
110 nm |
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MIC_DAC14 is compact and low power 14-bit digital-to-analog converter silicon IP. It features wide range input supply voltage from 1.7V to 5.6V. Its single-end output ranges from 0.1 to 0.9 of supply voltage.
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Introduction |
14-Bit 3 MSPS ADC in GSMC110nm |
By Quotes |
322.000 K μm^2 |
3 MHz |
110 nm |
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MCR_GS110_ADC14 is compact and low power 14-bit analog-to-digital converter silicon IP. It has 20 single-end input channel selection multiplexer or 10 differential input channels selection. This ADC uses fully differential SAR architecture optimized for low
The ADC is designed for high dynamic performance for input frequencies up to Nyquist rate.
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Introduction |
Dual-Channel 12-bit 80 MSPS ADC IP in UMC 65 nm |
By Quotes |
450.000 μm^2 |
0.8 MHz |
65 nm |
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ADC X is an ultra-compact and very low power analog-to-digital converter (ADC) IP. The 12-bit 80 MSPS Dual ADC includes an internal custom bandgap voltage reference. It is capable of supplying bias currents to other parallel ADCs. IP architecture is robust and can be ported to other
65 nm processes.The ADC uses fully differential pipeline architecture with custom low-disturbance digital correction technique which allows single supply bus for both digital and analog.
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Introduction |
12-Bit 50 MSPS ADC in IBM 180 SOI |
By Quotes |
280.000 μm^2 |
50 MHz |
180 nm |
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MICIP_ADC12 is compact and low power 12-bit analog-to-digital converter silicon IP. This ADC uses 1.5b/stage pipelined architecture optimized for low power and small area.
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Introduction |
10/100/1000 Gigabit Ethernet Transceiver |
By Quotes |
None |
None |
None |
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The MIPG PHY is part of the A family of devices - which includes the MIPG PHY-031, MIPG PHY-033, and the MIPG PHY. It is A company’ 4th generation, single port 10/100/1000 Mbps Tri-speed Ethernet PHY. It supports RGMII interface to the MAC.™
The MIPG PHY provides a low power, low BOM (Bill of Materials) cost solution for comprehensive applications including consumer, enterprise, carrier and home networks such as PC, HDTV, Gaming machines, Blue-ray players, IPTV STB, Mdia Players, IP Cameras, NAS, Printers, Digital Photo Frames, MoCA/Homeplug (Powerline)/EoC/ adapters and Home Router & Gateways, etc.
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Introduction |
Ultra-low Power Voltage Reference in 40 nm (VVR060LT040) |
By Quotes |
None |
None |
40 nm |
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Voltage Reference for Integrated PMU (Silicon-proven 40 nm, low-power for IoT with quiescent current of <0.9 μA)
This series of fully-integrated low power voltage references generates a 0.6 V output voltage and supports an input from 2.8 to 4.2 V. They operate at an ultra-low quiescent current of < 0.9 μA. These voltage references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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Introduction |
Ultra-High Accuracy Bandgap Reference in 130 nm (VBRS1000NT130) |
By Quotes |
None |
None |
130 nm |
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ACCUREF™ Bandgap Reference (Silicon-proven 40 nm, low-power, low-noise, ultra-precise single-digit mV accuracy, no external components required)
ACCUREF™ Voltage and Current References: This series of low-power, low-noise IP cores generates a precise, adjustable reference voltage with single-digit millivolt (mV) accuracy over a wide temperature range without external components. With their unique design that improves upon current products by allowing the systems to operate with ultra-low levels of power consumption without sacrificing accuracy or noise performance, our family of ACCUREF™ voltage and current reference IP cores support a broad range of industry applications with improved efficiency and remarkable area savings overall.
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Introduction |
3 mA Capless LDO in 40 nm (VLDS0003LNT040) |
By Quotes |
None |
None |
40 nm |
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Power Quencher® Capless LDO (Silicon-proven 40 nm, 3 mA, excellent quiescent current for IoT)
This series of low-power, fully-integrated low dropout (LDO) voltage regulators achieves a low-noise output voltage without external components, thus saving package pins and valuable PC board space. These LDOs are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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Introduction |
High-Accuracy Bandgap Reference in 40 nm (VBR120T040) |
By Quotes |
None |
None |
40 nm |
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Bandgap Reference for Integrated PMU (Silicon-proven 40 nm, high-accuracy of < ±1%)
This series of fully-integrated high-accuracy bandgap voltage references generates a 1.2 V output voltage and supports an input from 2.8 to 4.2 V. They provide an output voltage accuracy of < ±1%. These bandgap references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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Introduction |