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HEART(High Efficient Accumulative Repairing Technical) 50000 Points 5.250 K Gates 2.2 GHz 40 nm  
HEART can efficient repair faulty SRAM after using BRAINS. SoCs can mantain correctness of functions and avoid fatal error of system reault in SRAM's defect through SRAM's repairing technical. HEART is SRAM accumulative repairing technical, and it combines advantages of Soft-repair and Hard-repair. HEART supports internal registers of SoCs and external storages of SoCs to record SRAM's faulty information. Once SoCs have new SRAM's defect after using them for a long time, users can repeated repair SRAM's defect through HEART. In addtion, HEART also support "On-Demad" testing and repairing requirement. It means that users can enable system registers of SoCs or signal of HEART to test and repair SRAM at one when SoCs have fatal error situations.   Introduction
NVM test and repair 60000 Points 5.250 K Gates 2.2 GHz 40 nm  
HEART (High Efficient Accumulative Repairing Technical) is a built-in self-repair (BISR) mechanism which uses to recover errors detected after memory testing and to improve yield rate. This mechanism is implemented with spare memories and a built-in redundancy analyze (BIRA) logics which is designed to allocate the redundancy. It needs a storable device (eFuse, OTP or registers) to store testing results after analysis. We provides an efficient accumulative repairing solution to combine advantages of soft BISR mechanism and hard BISR mechanism for improving yield rate. Introduction
USB2.0 UTMI Device PHY(non-oscillator) 100000 Points 280.000 K μm^2 30.6 MHz 40 nm  
The USB PHY is an UTMI compatible USB2.0 device PHY IP which does not  require external oscillator reference. It is comprised of both USB1.1 and USB2.0  transceivers and it is also comprised of digital logic needed to convert USB serial  data to 8 or 16 bit parallel data. Introduction
140 mA Buck DC-DC Converter in 40 nm (VBKS0140T040) By Quotes None None 40 nm  
Buck DC-DC Converter for Integrated PMU (Silicon-proven 40 nm, 140 mA, optimized clocking to eliminate spurious emissions for low system noise) This series of buck DC-DC converters delivers up to 140 mA of load current and features optimized clocking options to eliminate spurious emissions resulting in much lower system noise. This buck DC-DC converter is silicon-proven in a 40 nm process and is a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications. Introduction
Flexsupply™ Switching Converter in 40 nm (VRDS00XXT040) By Quotes None None 40 nm  
Flexsupply™ Switching Converter (Silicon-proven 40 nm, allows products to work at ultra-low battery levels, no external components needed) Flexsupply™ Buck/Boost DC-DC Converters: This series of buck/boost switched capacitor regulated voltage doubler IP cores allows operation across a wide range of battery voltage levels, without external components. With their low power consumption and integrated, modular design, this series of IP cores supports a broad range of industry applications with improved efficiency and flexibility. Introduction
High-Accuracy Bandgap Reference in 40 nm (VBR120T040) By Quotes None None 40 nm  
Bandgap Reference for Integrated PMU (Silicon-proven 40 nm, high-accuracy of < ±1%) This series of fully-integrated high-accuracy bandgap voltage references generates a 1.2 V output voltage and supports an input from 2.8 to 4.2 V. They provide an output voltage accuracy of < ±1%. These bandgap references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications. Introduction
3 mA Capless LDO in 40 nm (VLDS0003LNT040) By Quotes None None 40 nm  
Power Quencher® Capless LDO (Silicon-proven 40 nm, 3 mA, excellent quiescent current for IoT) This series of low-power, fully-integrated low dropout (LDO) voltage regulators achieves a low-noise output voltage without external components, thus saving package pins and valuable PC board space. These LDOs are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications. Introduction
Ultra-low Power Voltage Reference in 40 nm (VVR060LT040) By Quotes None None 40 nm  
Voltage Reference for Integrated PMU (Silicon-proven 40 nm, low-power for IoT with quiescent current of <0.9 μA) This series of fully-integrated low power voltage references generates a 0.6 V output voltage and supports an input from 2.8 to 4.2 V. They operate at an ultra-low quiescent current of < 0.9 μA. These voltage references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications. Introduction
10-bit 165 MSPS ADC IP in 28 nm 80000 Points 70.000 K μm^2 165 MHz 28 nm  
UIP_ADC10_165M_564144 is an ultra-compact and very low power analog-to-digital converter (ADC) silicon IP. The 10-bit 165 MSPS ADC includes an internal custom bandgap voltage reference. It is capable of supplying bias currents to other parallel ADCs.   The ADC uses fully differential pipeline architecture with custom low-disturbance digital correction technique which allows single supply bus for both digital and analog. The ADC is designed for high dynamic performance for input frequencies up to Nyquist. This makes the IP perfectly suitable for video, imaging and communication appliances.   The IP is available in different metal options as well as deep N-well (DNW) option for SoC with high level of substrate noise. It consumes only 12mW at 165 MSPS operation and requires silicon area of 0.07 mm^2. The IP does not require any external decoupling and is ideal for integration in mixed-signal systems. The output data of ADC is available in 2’s complement format.   UIP_ADC10_165M_564144 can be used in the following applications:   ‧Digital imaging ‧TV/Video ‧Wireless LAN ‧Rx communication channel Introduction
10-bit 165 MSPS ADC IP in 28 nm 80000 Points 70.000 K μm^2 165 MHz 28 nm  
UIP_ADC10_165M_809744 is an ultra-compact and very low power analog-to-digital converter (ADC) silicon IP. The 10-bit 165 MSPS ADC includes an internal custom bandgap voltage reference. It is capable of supplying bias currents to other parallel ADCs.   The ADC uses fully differential pipeline architecture with custom low-disturbance digital correction technique which allows single supply bus for both digital and analog. The ADC is designed for high dynamic performance for input frequencies up to Nyquist. This makes the IP perfectly suitable for video, imaging and communication appliances.   The IP is available in different metal options as well as deep N-well (DNW) option for SoC with high level of substrate noise. It consumes only 12mW at 165 MSPS operation and requires silicon area of 0.07 mm2. The IP does not require any external decoupling and is ideal for integration in mixed-signal systems. The output data of ADC is available in 2’s complement format.   UIP_ADC10_165M_809744 can be used in the following applications:   ‧Digital imaging ‧TV/Video ‧Wireless LAN ‧Rx communication channel ‧IOT Introduction
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