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| USB2.0 UTMI Device PHY(non-oscillator) | 100000 Points | 280.000 K μm^2 | 30.6 MHz | 40 nm |  |
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| The USB PHY is an UTMI compatible USB2.0 device PHY IP which does not require external oscillator reference. It is comprised of both USB1.1 and USB2.0 transceivers and it is also comprised of digital logic needed to convert USB serial data to 8 or 16 bit parallel data. | Introduction | |||||
| NVM test and repair | 60000 Points | 5.250 K Gates | 2.2 GHz | 40 nm | |
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| HEART (High Efficient Accumulative Repairing Technical) is a built-in self-repair (BISR) mechanism which uses to recover errors detected after memory testing and to improve yield rate. This mechanism is implemented with spare memories and a built-in redundancy analyze (BIRA) logics which is designed to allocate the redundancy. It needs a storable device (eFuse, OTP or registers) to store testing results after analysis. We provides an efficient accumulative repairing solution to combine advantages of soft BISR mechanism and hard BISR mechanism for improving yield rate. | Introduction | |||||
| HEART(High Efficient Accumulative Repairing Technical) | 50000 Points | 5.250 K Gates | 2.2 GHz | 40 nm | |
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| HEART can efficient repair faulty SRAM after using BRAINS. SoCs can mantain correctness of functions and avoid fatal error of system reault in SRAM's defect through SRAM's repairing technical. HEART is SRAM accumulative repairing technical, and it combines advantages of Soft-repair and Hard-repair. HEART supports internal registers of SoCs and external storages of SoCs to record SRAM's faulty information. Once SoCs have new SRAM's defect after using them for a long time, users can repeated repair SRAM's defect through HEART. In addtion, HEART also support "On-Demad" testing and repairing requirement. It means that users can enable system registers of SoCs or signal of HEART to test and repair SRAM at one when SoCs have fatal error situations. | Introduction | |||||
| BRAINS | 50000 Points | 5.250 K Gates | 1.2 GHz | 40 nm | |
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| With improvement of technology node and IC design is geting more complex, the ratio of embedded memory in SoCs have been exceeding 50%. The fault types of memory are getting complex. The Memory BIST (Built-In Self-Test) is generated for efficient controlling IC cost. The traditional BIST method is inserted along with single memory. If there are many memories in SoCs, the area and testing time of SoCs are expanded a lot due to insertion of BIST. Therefore the SoCs' cost will increase rapidly because memory testing time is too long. We devoted in developing SRAM testing solutions for a long time. BRAINS is based on memory testing patents to reduce testing time and increase yield rate. In addition, BRAINS has many unique features to increase SoCs' reliability and stability. | Introduction | |||||
| USB2.0 OTG PHY in 40 nm | 80000 Points | 257.556 K μm^2 | 30.6 MHz | 40 nm | |
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| The IP is an UTMI+ Level 3 compatible USB2.0 OTG function transceiver IP. It is comprised of both USB1.1 and USB2.0 transceivers; itis comprised of digital logic needed to convert USB serial data to 8 or 16 bit parallel data for high speed and full speed. It is also support full speed and low speed serial mode. | Introduction | |||||
| 12-Bit 800KSPS Low Power SAR-ADC | By Quotes | None | 25 MHz | 180 nm | |
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| The SAR-ADC is a low power ADC that is implemented in Successive Approximation architecture. It can provide 12-bit resolution capability with only 3V supply voltage. It accepts an analog input range from 0 to VCC and digitizes the input at a maximum sampling frequency rate of 800KHz at 5V supply voltage. This ADC also includes MUX design to select 0 of 7 analog inputs. The power dissipation is less than 5mW with 5V power supply. This SAR-ADC is implemented in SMIC 0.18μm generic CMOS technology. | Introduction | |||||
| Low power oscillator | 12000 Points | 100.100 μm^2 | 32 KHz | 40 nm | |
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| OSC32K is designed for 40nm advance process with 1.2v to 3.3v wide power(VDD) range. | Introduction | |||||
| 12-Bit 320MPS IQ DAC in TSMC40LP | 70000 Points | 250.000 K μm^2 | 320 MHz | 180 nm | |
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| UIP_DAC12X2_320M_922687 is compact and low power 12-bit digital-to-analog converter silicon IP in IBM 180nm SOI process. It features two channel current steering DAC. This IQ DAC IP is optimized for low power and small area. At 320 MHz conversation rate, it only consumes 63mW and occupies silicon area of 0.25 mm2. APPLICATIONS WiFi / LTE / WiMax Wireless MIMO Digital Video Communication Transmit | Introduction | |||||
| 14 Bit Rail to Rail DAC | 60000 Points | 75.000 K μm^2 | 1 MHz | 110 nm | |
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| UIP_DAC14_1M_392231 is compact and low power 14-bit digital-to-analog converter silicon IP. It features wide range input supply voltage from 1.7V to 5.6V. Its single-end output ranges from 0.1 to 0.9 of supply voltage. This DAC IP is self-biased and optimized for low power and small area. At 1 MHz conversation rate, it only consumes 680uA to drive 15K/50pF loading and occupies silicon area of 0.075 mm2. APPLICATIONS General purpose digital to analog converter Battery monitory system Housekeeping Auxiliary functionality | Introduction | |||||
| 14-Bit 3 MSPS ADC in GSMC110nm | 60000 Points | 32.000 K μm^2 | 3 MHz | 110 nm | |
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| UIP_ADC14_3M_245303 is compact and low power 14-bit analog-to-digital converter silicon IP. It has 20 single-end input channel selection multiplexer or 10 differential input channels selection. This ADC uses fully differential SAR architecture optimized for low power and small area. The ADC is designed for high dynamic performance for input frequencies up to Nyquist rate. This ADC consumes 150 uA at 3 MSPS operation and occupies silicon area of 0.32 mm2 . The ADC has high immunity to substrate noise and is ideal for SoC integration. APPLICATIONS General purpose data acquisition Battery monitory system Temperature monitory system | Introduction | |||||
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